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VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating Blocking VDRM VRRM IDRM IRRM VDClink Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-state current Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate 2500 V 17 V 30 mA 50 mA 1400 V VD = VDRM VR = VRRM VGR 2V RGK = VGR 2V -40 Tj 125 C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm A Mounting force Acceleration: Device unclamped Device clamped M DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.8 kg 22 mm 13 mm min. max. 17 kN 24 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5SGA 20H2501 GTO Data On-state ITAVM ITRMS ITSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 830 A 1300 A 16 kA 32 kA 2 1.28x106 A s 2 0.51x106 A s Half sine wave, TC = 85 C tP tP tP tP IT IT = = = = = 10 ms 1 ms 10 ms 1 ms 2000 A A Tj = 125C After surge: VD = VR = 0V I2t VT VT0 rT IH On-state voltage Threshold voltage Slope resistance Holding current 2.80 V 1.66 V 0.57 mW 50 A = 200 - 2500 Tj = 125 C Tj = 25 C Gate VGT IGT VGRM IGRM Gate trigger voltage Gate trigger current Repetitive peak reverse voltage Repetitive peak reverse current 1.0 V 2.5 A 17 V 50 mA VG = VGRM VD RA = 24 V = 0.1 W Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state current td tr ton(min) Eon Delay time Rise time Min. on-time Turn-on energy per pulse 400 A/s 700 A/s 1.5 s 3.5 s 80 s 0.75 Ws f = 200Hz f = 1Hz VD = IT = IGM = CS = IT = 2000 A, Tj = 125 C IGM = 30 A, diG/dt = 20 A/s 0.5 VDRM Tj 2000 A 30 A 4 F = 125 C 200 A/s 20 A/s 5W di/dt = diG/dt = RS = Turn-off switching ITGQM Max controllable turn-off current ts tf toff(min) Eoff IGQM Storage time Fall time Min. off-time Turn-off energy per pulse Peak turn-off gate current 22.0 s 2.0 s 80 s 3.5 Ws 700 A 2000 A VDM = VDRM CS = 4 F VD = 1/2 VDRM Tj = diGQ/dt = LS VDM = 30 A/s 0.3 H VDRM 30 A/s 125 C diGQ/dt = ITGQ = ITGQM CS = LS 4 F RS 0.3 H = 5W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 2 of 9 5SGA 20H2501 Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 30 K/kW 39 K/kW 17 K/kW 10 K/kW 5 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...125C Z thJC (t) = a 4 i 1 11.7 0.9 2 4.7 0.26 3 0.64 0.002 4 0.0001 0.001 R i(1 - e - t / t i ) RI (K/kW) ti (s) i=1 Fig. 1 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 3 of 9 5SGA 20H2501 Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current. Fig. 4 Surge current and fusing integral vs. pulse width ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 4 of 9 5SGA 20H2501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 5 of 9 5SGA 20H2501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS RS Tj = 20 A/s = 4 F =5W = 125 C Definition of Turn-on energy: 20 m s E on = oV 0 D x ITdt (t = 0, IG = 0.1 x IGM ) Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 m s E off = oV 0 D x ITdt ( t = 0, IT = 0.9 x ITGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 6 of 9 5SGA 20H2501 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 500 1000 1500 Eoff [J] Conditions: VD = 0.5xVDM di GQ / dt = 30 A/ms CS = 4 mF, RS = 5 W T j = 125C 5SGA 20H2501 QGQa [ mC] 7000 6000 4.0 3.5 Eoff [J] Conditions: V D = 0.75 V DM , V DM = V DRM di GQ /dt = 30 A/ ms RS = 5 W Tj = 125C 5SGA 20H2501 CS = 4 mF QGQa 3.0 5000 4000 3000 2000 1000 2000 2.5 2.0 1.5 1.0 0.5 0.0 VDM=VDRM 0.75 VDRM 0.5 VDRM CS = 3 mF CS = 6 mF ITGQ [A] 0 500 1000 1500 ITGQ [A] 2000 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [ms] 5 50 IGQM [A] 1000 5SGA 20H2501 4 40 800 IGQM 3 30 EOFF 600 2 20 tS Conditions: VD = 0.5 VDM , VDM = VDRM ITGQ = 2000 A ,di GQ /dt = 30 A/m s CS = 4 mF, RS = 5 W , Tj = 125 C 400 1 10 200 0 -10 0 0 10 20 2530 40 50 60 707580 0 90 100 110 120 125 Tj [C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. ts [s] 50 40 30 20 10 0 0 10 20 30 40 50 60 IGQM [A] Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature 1000 800 600 400 ts [s] 50 40 30 IGQM 20 10 0 0 500 1000 1500 Conditions: diGQ/dt = 30 A/m s Tj = 125 C 5SGA 20H2501 5SGA 20H2501 IGQM [A] 1000 800 600 400 200 tS IGQM Conditions: ITGQ = 2000 A Tj = 125 C 200 0 tS di GQ/dt [A/ms] 0 2000 I TGQ [A] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 7 of 9 5SGA 20H2501 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1205-01 Jun. 04 page 8 of 9 5SGA 20H2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 info@ch.abb.com www.abbsem.com Doc. No. 5SYA1205-01 Jun. 04 |
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